V-Band Balanced Amplifiers using Monolithic Uniplanar Tandem Couplers
Jeong-Ho Yoo1, Pil-Seok Ko2, Sam-Dong Kim3
1Jeong-Ho Yoo, Division of Electronics and Electrical eng., Dongguk University, Seoul, Korea.
2Pil-Seok Ko, Division of Electronics and Electrical eng., Dongguk University, Seoul, Korea.
3Sam-Dong Kim, Corresponding Author, Division of Electronics and Electrical eng., Dongguk University, Seoul, Korea.
Manuscript received on November 15, 2014. | Revised Manuscript received on November 18, 2014. | Manuscript published on November 25, 2014. | PP:5-7 | Volume-3 Issue-1, November 2014. | Retrieval Number: L08451021214
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: V-band balanced amplifiers were monolithically fabricated using the uniplanar tandem couplers and 100-nm GaAs pseudomorphic high electron mobility transistors. Due to the excellent low-loss broadband coupling and high directivity of the tandem couplers, the balanced amplifier showed a very low input return-loss of -44 dB at 60 GHz which is known to be the best performance among the monolithic microwave integrated circuit V-band amplifiers reported to date. Compared to those of the reference single-ended amplifiers, the balanced amplifiers also exhibited comparable high S21 gains of 8-14 dB in a frequency range of 55-65 GHz.
Keywords: V-band, balanced amplifiers, tandem couplers, coplanar waveguide, return-loss.